Raman study of amorphization in nanocrystalline 3C–SiC irradiated with C+ and He+ ions
Raman study of amorphization in nanocrystalline 3C–SiC irradiated with C+ and He+ ions
复制标题
C、He离子辐照纳米晶3C-SiC非晶化的拉曼研究
DOI：
10.1002/jrs.5631
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发表时间：
2019
影响因子：
2.5
通讯作者：
Tieshan Wang
中科院分区：
文献类型：
--
作者：
Limin Zhang;Weilin Jiang;Chenglong Pan;Raul C. Fadanelli;Wensi Ai;Liang Chen;Tieshan Wang
本研究研究了嵌入非晶 SiC 基质中的 3C-SiC 纳米颗粒中 C+ 和 He+ 离子辐照诱导的非晶化过程。拉曼光谱和卢瑟福背散射光谱用于损伤表征。与相同辐照条件下的单晶对应物相比，平均尺寸为 ~6 或 ~20 nm 的 SiC 晶粒在室温下完全非晶化，剂量较低。除了损伤积累引起的晶粒非晶化之外，晶体/非晶界面的优先非晶化也可能发挥重要作用。这种界面驱动的非晶化在 C+ 和 He+ 离子辐照下以相当的速率进行。该结果可能对纳米晶SiC在先进核反应堆中的应用具有重要意义。
This study examines C+ and He+ ion irradiation‐induced amorphization processes in 3C–SiC nanograins embedded in an amorphous SiC matrix. Raman spectroscopy and Rutherford backscattering spectrometry are used for damage characterization. SiC grains with an average size of either ~6 or ~20 nm were observed to be fully amorphized to a lower dose at room temperature compared with their monocrystalline counterpart under the identical irradiation condition. In addition to damage accumulation‐induced amorphization in the grains, preferential amorphization at the crystalline/amorphous interfaces could play a significant role. This interface‐driven amorphization proceeds at comparable rates for C+ and He+ ion irradiations. The results may have an important implication for nanocrystalline SiC to be applied in advanced nuclear reactors.