Analytic Device Model of Organic Field-Effect Transistors with Doped Channels
Analytic Device Model of Organic Field-Effect Transistors with Doped Channels
复制标题
掺杂沟道有机场效应晶体管的分析器件模型
DOI：
10.1021/acsami.0c12534
复制
发表时间：
2020
影响因子：
9.5
通讯作者：
Lüssem, Björn
中科院分区：
文献类型：
--
作者：
Liu, Shiyi;Radha Krishnan, Raj Kishen;Dahal, Drona;Lüssem, Björn
掺杂已被证明不仅在有机场效应晶体管（OFFET）的设计中提供了额外的自由度，而且还提高了它们的性能和稳定性。本文提出了一个基于沟道内正方形掺杂分布假设的分析模型，描述了掺杂对OFFEs传输特性的影响。通过一系列具有不同掺杂条件的OFFERS实验验证了该模型。晶体管沟道中的精确掺杂分布通过使用AC小信号漂移扩散模拟拟合掺杂的金属-绝缘体-半导体（MIS）结的电容/电压响应来确定。结果表明，真实的掺杂分布偏离了分析模型的简化假设，即，发现电介质/半导体界面处的有效掺杂浓度降低。然而，它示出的分析模型是不敏感的这种偏差，因为只有每单位面积的总密度电荷决定的晶体管行为的变化。总体而言，所提出的理论提供了新的设计规则，可用于指导高性能掺杂OFFEs的发展。
Doping has been shown to not only provide additional degrees of freedom in the design of organic field-effect transistors (OFETs) but to increase their performance and stability as well. An analytical model based on the assumption of a square doping profile inside the channel is presented here that describes the effect of doping on the transfer characteristic of OFETs. The model is validated experimentally by a series of OFETs with varying doping conditions. The precise doping profile in the transistor channel is determined by fitting the capacitance/voltage response of doped metal–insulator–semiconductor (MIS) junctions using an AC small-signal drift-diffusion simulation. It is shown that the real doping profile deviates from the simplifying assumptions of the analytical model, i.e., it is found that the effective doping concentration at the dielectric/semiconductor interface is reduced. However, it is shown that the analytical model is not sensitive to this deviation as only the total density charges per unit area determine the changes in the transistor behavior. Overall, the presented theory provides new design rules that can be used to guide the development of doped OFETs with high performance.