Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface
Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface
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DOI：
10.1063/1.93583
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发表时间：
1982-09
影响因子：
4
通讯作者：
P. Lenahan;P. Dressendorfer
中科院分区：
文献类型：
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作者：
P. Lenahan;P. Dressendorfer
对经过伽马辐照的（111）Si/SiO2结构进行了电子自旋共振测量，测量结果与氧化物上的偏置的函数关系。我们观察到辐射诱导的顺磁性Pb中心的密度与bais有很大的变化。我们得出结论，Pb缺陷（Si/SiO2界面处的三价硅）占辐射诱导界面态的很大一部分。
Electron spin resonance measurements have been made on gamma‐irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation‐induced paramagnetic Pb centers with bais. We conclude that Pb defects (trivalent silicons at the Si/SiO2 interface) account for a very large portion of the radiation‐induced interface states.