Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells
Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells
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DOI：
10.1002/adma.201401054
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发表时间：
2014-07-16
影响因子：
29.4
通讯作者：
Buonassisi, Tonio
中科院分区：
文献类型：
--
作者：
Lee, Yun Seog;Chua, Danny;Buonassisi, Tonio
基于氧化铜（I）（Cu2O）的太阳能电池的功率转换效率通过薄氧化镓（Ga2O3）层的原子层沉积而增强。通过改善能带对准和钝化界面缺陷，器件的开路电压为1.20 V，效率为3.97%，显示出超过7%效率的潜力。
The power conversion efficiency of solar cells based on copper (I) oxide (Cu2O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2O3) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.