Study of the Effect of Coulomb Repulsion on Resonant Tunneling in Magnetic Fields
Study of the Effect of Coulomb Repulsion on Resonant Tunneling in Magnetic Fields
复制标题
库伦斥力对磁场中共振隧道效应的研究
DOI：
10.1143/jpsj.64.3871
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发表时间：
1995
影响因子：
1.7
通讯作者：
A. Oguri
中科院分区：
文献类型：
--
作者：
S. Nonoyama;A. Oguri
在平均场近似下，利用递归绿色函数方法，研究了在地库仑排斥对磁场作用下小相互作用区共振隧穿过程的影响.利用久保公式计算电导作为化学势μ的函数，并对单模和双模准一维量子线进行计算。在磁场中，一些共振能级相互靠近，形成单个朗道能级，从而增强了小区域内的电子关联，使电导的μ-依赖性被很小的库仑排斥值所改变。对于双模线的共线型电子状态，其中自旋在小区域中的反铁磁在x方向上和铁磁在y方向上对齐，被发现是稳定的在很宽的范围内的化学势。
The effect of on-site Coulomb repulsion on the process of resonant tunneling through a small interacting region is studied in the presence of a magnetic field by using the recursive Green's function method within a mean field approximation. The conductance is calculated as a function of the chemical potential µ making use of the Kubo formula, and calculations are performed for single- and double-mode quasi-one-dimensional quantum wires. In a magnetic field, some resonance levels close each other to form a single Landau level, so that the electron correlation in the small region is enhanced, and the µ-dependence of the conductance is changed by rather small value of the Coulomb repulsion. For the double-mode wire a collinear-type electronic state, in which spins in the small region are aligned antiferromagnetically in the x -direction and ferromagnetically in the y -direction, is found to be stable over a wide range of the chemical potential.