Synthesis and characterization of boron doped diamond/.BETA.-SiC composite films
Synthesis and characterization of boron doped diamond/.BETA.-SiC composite films
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DOI：
10.1063/1.4974295
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发表时间：
2017-01
影响因子：
4
通讯作者：
Haiyuan Fu;Zhuang Hao;Yang Liang;Hantschel Thomas;Ma Song;Zhidong Zhang;Jiang Xin
中科院分区：
文献类型：
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作者：
Haiyuan Fu;Zhuang Hao;Yang Liang;Hantschel Thomas;Ma Song;Zhidong Zhang;Jiang Xin
采用微波等离子体化学气相沉积（MPCVD）工艺制备了硼掺杂金刚石/β-SiC复合薄膜，其中导电的金刚石相被绝缘的β-SiC相所分隔。通过控制沉积过程中的气相成分，可以很好地控制复合膜中硼的掺入量和金刚石/β-SiC的比例。扫描电子显微镜，透射电子显微镜，拉曼和X射线衍射测量进行研究的薄膜的结构组成。观察到在生长过程中引入硼并不影响金刚石和β-SiC晶体的独立生长，晶体质量高。扫描扩展电阻显微镜测量证实了导电金刚石相和绝缘β-SiC相在膜中的存在。观察到的金刚石和β-SiC之间电导率的差异可以通过金刚石和β-SiC晶体中不同的硼受体水平来解释。循环伏安法测量
Boron doped diamond/β-SiC composite films with a conductive diamond phase separated by the insulating β-SiC phase are fabricated by the microwave plasma chemical vapor deposition process. By manipulating the gas phase composition during the film deposition, the boron incorporation and diamond/β-SiC ratio in the composite film are well controlled. Scanning electron microscopy, transmission electron microscopy, Raman and X-ray diffraction measurements are carried out to study the structural composition of the films. It is observed that the introduction of boron during the growth process does not affect the independent growth of diamond and β-SiC crystals with high crystal quality. Scanning spreading resistance microscopy measurements confirm the presence of the conductive diamond phase and the insulating β-SiC phase in the film. The observed differences in the conductivities between diamond and β-SiC are explained by the different boron acceptor levels in diamond and β-SiC crystals. Cyclic voltammetry measu...