Raman spectroscopy of GaN nucleation and free-standing layers grown by hydride vapor phase epitaxy on oxidized silicon
Raman spectroscopy of GaN nucleation and free-standing layers grown by hydride vapor phase epitaxy on oxidized silicon
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氧化硅上氢化物气相外延生长的 GaN 成核和独立层的拉曼光谱
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
D. Zahn
中科院分区：
文献类型：
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作者：
E. Konenkova;Y. Zhilyaev;V. Fedirko;D. Zahn
利用拉曼光谱和原子力显微镜研究了氮化镓成核层（NL-GaN）和独立氮化镓成核层（FS-GaN）。在520°C （NL层）和970°C （FS层）下，通过氢化物气相外延将这些层沉积在氧化硅衬底上。研究了高温退火（1010℃）对FS-GaN层性能的影响。当生长时间从10 min增加到200 min时，NL-GaN层中岛的平均高度从15 nm增加到400 nm。NLs的平均生长速率很低，为≈1×10−2 nm/s。当岛的平均尺寸增加到400 nm时，在NL-GaN层上观察到E2 （566 cm−1）和A1（纵向光学）（730 cm−1）峰，在FS-GaN层上检测到E2 （567.3 cm−1）和E1[横向光学（to）] （558.3 cm−1）模式的散射。FS-GaN层的高温退火导致E2和E1（TO）峰的强度从正面检测到增加，而没有影响。
GaN nucleation layers (NL-GaN) and GaN free-standing (FS-GaN) layers are studied using Raman spectroscopy and atomic force microscopy. The layers are deposited onto oxidized silicon substrates by hydride vapor phase epitaxy at 520 °C (NL layers) and 970 °C (FS layers). The effect of high-temperature annealing (1010 °C) on the properties of FS-GaN layers is investigated. The average height of the islands in the NL-GaN layers is found to increase from 15 to 400 nm when the growth time is increased from 10 to 200 min. The average growth rate of NLs is found to be very low, namely, ≈1×10−2 nm/s. E2 (566 cm−1) and A1 (longitudinal optical) (730 cm−1) peaks are observed on NL-GaN layers when the average size of the islands increases to 400 nm, scattering by E2 (567.3 cm−1) and E1 [transverse optical (TO)] (558.3 cm−1) modes is detected on FS-GaN layers. High-temperature annealing of the FS-GaN layers results in an increase of the intensity of E2 and E1(TO) peaks detected from the front side whereas no effect is...