Crystal synthesis, electrical properties, and spontaneous and stimulated photoluminescence of In1−xGaxP:N grown from solution
Crystal synthesis, electrical properties, and spontaneous and stimulated photoluminescence of In1−xGaxP:N grown from solution
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从溶液中生长的 In1−xGaxP:N 的晶体合成、电学性质以及自发和受激光致发光
DOI：
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发表时间：
1973
期刊：
影响因子：
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通讯作者：
G. Zack
中科院分区：
文献类型：
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作者：
H. Macksey;N. Holonyak;R. Dupuis;J. Campbell;G. Zack
描述了 In1−xGaxP 在恒温下从溶液中生长的过程，并讨论了晶体中 Ga 的分配系数和掺入以及施主杂质。测量的迁移率随成分的变化表明直接-间接转变接近 x=0.74。给出了直接和间接 In1−xGaxP:N 的光致发光数据，并将带隙、氮 A 线和 NN 对峰的能量绘制为晶体组成的函数。氮 A 线 (EN) 在晶体组成 x ∼0.71 处简并，具有 Γ 导带最小值 (EЛ)。对于 x≤0.71，在基本导带边缘上方存在共振 N 陷阱态。共振 N 陷阱跃迁可以在 x=0.69 In1−xGaxP:N 中以非常高的能量 (2.246 eV–5520 A, 77 °K) 被光激发进入激光操作，实际上，复合跃迁得到增强 (EN∼EΓ)。
The growth of In1−xGaxP from solution at constant temperature is described, and the distribution coefficient and incorporation of Ga in the crystal and also donor impurities are discussed. The variation of the measured mobility with composition indicates that the direct‐indirect transition is near x=0.74. Photoluminescence data on direct and indirect In1−xGaxP:N are presented, and the energies of the band gap, nitrogen A line, and NN‐pair peaks are plotted as a function of crystal composition. The nitrogen A line (EN) is degenerate with the Γ conduction‐band minimum (EΓ) at a crystal composition of x ∼0.71. For x≤0.71 a resonant N‐trap state exists above the fundamental conduction band edge. The resonant N‐trap transition can be photoexcited into laser operation in x=0.69 In1−xGaxP:N at very high energy (2.246 eV–5520 A, 77 °K) where, in fact, the recombination transition is enhanced (EN∼EΓ).