High mobility field-effect transistors based on MoS2 crystals grown by the flux method
High mobility field-effect transistors based on MoS2 crystals grown by the flux method
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DOI：
10.1088/1361-6528/abf6f1
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发表时间：
2021-04
期刊：
影响因子：
3.5
通讯作者：
V. Patil;Jihyun Kim;K. Agrawal;T. Park;J. Yi;N. Aoki;Kenji Watanabe;T. Taniguchi;Gil‐Ho Kim
中科院分区：
文献类型：
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作者：
V. Patil;Jihyun Kim;K. Agrawal;T. Park;J. Yi;N. Aoki;Kenji Watanabe;T. Taniguchi;Gil‐Ho Kim
二维（2D）二硫化钼（MoS 2）过渡金属二硫属化合物（TMDs）在光学和电子器件应用中具有巨大的潜力;然而，MoS 2的性能受到其晶体质量的限制，晶体质量可作为缺陷的衡量标准生长材料中的晶界。因此，MoS 2晶体的高质量生长仍然是一个关键问题。在这种情况下，我们建议通过熔剂法形成高质量的二硫化钼晶体。由此产生的电性能证明了晶体形态对二硫化钼场效应晶体管性能的显著影响。用相对较高浓度的硫（摩尔比为2.2）和2.5 °C h-1的冷却速率制备的MoS 2产生了良好的质量和最佳尺寸的晶体。详细研究了MoS 2场效应晶体管（FET）的室温和低温（77 K）电输运性质，使用和不使用六方氮化硼（h-BN）电介质来解决由于SiO2/2D材料界面处的散射而导致的迁移率退化问题。在77 K下，通过助熔剂法形成高质量晶体后，MoS 2/h-BN FET的最大场效应迁移率达到113 cm 2 V−1 s−1。我们的研究结果证实了实现大规模的高质量的晶体生长，减少缺陷密度，使用通量的方法，是实现更高的迁移率在MoS 2 FET器件与商业上可获得的MoS 2晶体并行的关键。
Two-dimensional (2D) molybdenum disulphide (MoS2) transition metal dichalcogenides (TMDs) have great potential for use in optical and electronic device applications; however, the performance of MoS2 is limited by its crystal quality, which serves as a measure of the defects and grain boundaries in the grown material. Therefore, the high-quality growth of MoS2 crystals continues to be a critical issue. In this context, we propose the formation of high-quality MoS2 crystals via the flux method. The resulting electrical properties demonstrate the significant impact of crystal morphology on the performance of MoS2 field-effect transistors. MoS2 made with a relatively higher concentration of sulphur (a molar ratio of 2.2) and at a cooling rate of 2.5 °C h−1 yielded good quality and optimally sized crystals. The room-temperature and low-temperature (77 K) electrical transport properties of MoS2 field-effect transistors (FETs) were studied in detail, with and without the use of a hexagonal boron nitride (h-BN) dielectric to address the mobility degradation issue due to scattering at the SiO2/2D material interface. A maximum field-effect mobility of 113 cm2 V−1 s−1 was achieved at 77 K for the MoS2/h-BN FET following high-quality crystal formation by the flux method. Our results confirm the achievement of large-scale high-quality crystal growth with reduced defect density using the flux method and are key to achieving higher mobility in MoS2 FET devices in parallel with commercially accessible MoS2 crystals.