EDGE STATES IN THE FRACTIONAL-QUANTUM-HALL-EFFECT REGIME
EDGE STATES IN THE FRACTIONAL-QUANTUM-HALL-EFFECT REGIME
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DOI：
10.1103/physrevlett.64.220
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发表时间：
1990-01-08
影响因子：
8.6
通讯作者：
MACDONALD, AH
中科院分区：
文献类型：
--
作者：
MACDONALD, AH
具有N个完整朗道能级的有限二维电子气具有N个穿过费米能级的边缘态分支。在这封信中，我们表明，在分数量子霍尔效应制度可以有许多分支的边缘状态的一个单一的部分填充朗道水平。第i个分支可以与分数电荷ef i相关联，并且Efi f i等于朗道能级填充因子。在特定填充因子下的边态电荷集直接反映了在该填充因子下发生的不可压缩基态的层次结构。
A finite-two-dimensional electron gas with N full Landau levels has N branches of edge states which cross the Fermi level. In this Letter we show that in the fractional-quantum-Hall-effect regime there can be many branches of edge states for a single partly filled Landau level. The ith branch can be associated with a fractional charge, ef i, and Σ i f i equals the Landau-level filling factor. The set of edge-state charges at a particular filling factor directly reflects the hierarchical structure of the incompressible ground state which occurs at the filling factor.