Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes
Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes
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DOI：
10.1063/1.1997277
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发表时间：
2005-08-01
影响因子：
4
通讯作者：
Matsunami, H
中科院分区：
文献类型：
--
作者：
Fujiwara, H;Kimoto, T;Matsunami, H
4H-SiC (0001) 外延层中内生堆垛层错的密度、形状和结构已通过阴极发光、光致发光和高分辨率透射电子显微镜进行了表征。这些分析表明，向内生长的堆垛层错具有8H结构，并且主要在化学气相沉积过程中在外延层/衬底界面附近产生。研究了堆垛层错对 4H-SiC (0001) 肖特基势垒二极管性能的影响。结果表明，堆垛层错导致肖特基势垒高度降低以及击穿电压降低。 (c) 2005 年美国物理研究所。
The density, shape and structure of in-grown stacking faults in 4H-SiC (0001) epitaxial layers have been characterized by cathodeluminescence, photoluminescence and high-resolution transmission electron microscopy. These analyses indicate that in-grown stacking faults are of 8H structure, and are generated mostly near the epilayer/substrate interface during chemical vapor deposition. The impact of the stacking faults on the performance of 4H-SiC (0001) Schottky barrier diodes has been investigated. It is revealed that the stacking faults cause the lowering of Schottky barrier height as well as the decrease of breakdown voltage. (c) 2005 American Institute of Physics.