Colloidal Synthesis and Electrical Properties of GeSe Nanobelts
Colloidal Synthesis and Electrical Properties of GeSe Nanobelts
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DOI：
10.1021/cm3023192
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发表时间：
2012-09
影响因子：
8.6
通讯作者：
Dimitri D. Vaughn;Du Sun;S. M. Levin;A. Biacchi;T. Mayer;R. Schaak
中科院分区：
文献类型：
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作者：
Dimitri D. Vaughn;Du Sun;S. M. Levin;A. Biacchi;T. Mayer;R. Schaak
GeSe是一种窄禁带的IV-VI族半导体材料，作为光致发光材料的潜在替代材料，其沿着其他光学和电学应用，已经引起越来越多的关注。然而，与其他几种窄带隙硫族化物半导体不同，GeSe纳米结构的例子很少被报道。一维纳米结构特别有吸引力，因为它们可以作为纳米结构电子器件的构建块。作为一个步骤，既增加了形态多样性的GeSe纳米材料和扩大图书馆的电子材料，可作为一维纳米结构，我们在这里报告的胶体合成和电性能的GeSe纳米带。GeSe纳米带通过首先将GeI 4、TOP-Se、油胺、油酸和六甲基二硅氮烷的一锅反应混合物加热至320 °C，然后添加额外的TOP-Se并加热额外的几个小时来合成。研究表明，一种无定形...
GeSe is a narrow band gap IV–VI semiconductor that has been attracting increasing attention as a potential alternative material for photovoltaics, along with other optical and electrical applications. However, unlike several other narrow band gap chalcogenide semiconductors, very few examples of GeSe nanostructures have been reported. One-dimensional nanostructures are particularly attractive, because they can serve as building blocks for nanostructured electronic devices. As a step toward both increasing the morphological diversity of GeSe nanomaterials and expanding the library of electronic materials that are accessible as one-dimensional nanostructures, we report here the colloidal synthesis and electrical properties of GeSe nanobelts. The GeSe nanobelts were synthesized by first heating a one-pot reaction mixture of GeI4, TOP-Se, oleylamine, oleic acid, and hexamethyldisilazane to 320 °C, then adding additional TOP-Se and heating for several additional hours. Aliquot studies revealed that an amorphou...