Imaging the Spatial Distribution of Electronic States in Graphene Using Electron Energy-Loss Spectroscopy: Prospect of Orbital Mapping
Imaging the Spatial Distribution of Electronic States in Graphene Using Electron Energy-Loss Spectroscopy: Prospect of Orbital Mapping
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DOI：
10.1103/physrevlett.128.116401
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发表时间：
2022-03-14
影响因子：
8.6
通讯作者：
Kepaptsoglou, D. M.
中科院分区：
文献类型：
--
作者：
Bugnet, M.;Ederer, M.;Kepaptsoglou, D. M.
在扫描透射电子显微镜中使用电子能量损失谱绘制了外延石墨烯多层膜中反键π * 和sigma* 态的空间分布。非弹性沟道模拟验证了解释的空间分辨信号的电子轨道，并证明了至关重要的影响的材料厚度的实验能力，以解决未占用状态的分布。这项工作说明了核心水平的电子能量损失谱的当前潜力，对电子轨道的直接可视化在广泛的材料，巨大的兴趣，以更好地了解许多其他性质之间的化学键在界面和固体中的缺陷。
The spatial distributions of antibonding pi* and sigma* states in epitaxial graphene multilayers are mapped using electron energy-loss spectroscopy in a scanning transmission electron microscope. Inelastic channeling simulations validate the interpretation of the spatially resolved signals in terms of electronic orbitals, and demonstrate the crucial effect of the material thickness on the experimental capability to resolve the distribution of unoccupied states. This work illustrates the current potential of core-level electron energy-loss spectroscopy towards the direct visualization of electronic orbitals in a wide range of materials, of huge interest to better understand chemical bonding among many other properties at interfaces and defects in solids.