Multitechnique elemental depth profiling of InAlGaN and InAlN films
Multitechnique elemental depth profiling of InAlGaN and InAlN films
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InAlGaN 和 InAlN 薄膜的多技术元素深度分析
DOI：
10.1116/1.5019635
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
S. Legendre
中科院分区：
文献类型：
--
作者：
Y. Mazel;E. Nolot;J. Barnes;M. Charles;R. Bouveyron;M. Mrad;A. Tempez;S. Legendre
这项工作显示了等离子体谱分析飞行时间质谱（PP-TOFMS）用于测定用于高电子迁移率晶体管的InAlGaN薄膜中的元素组成和分布的能力。将PP-TOFMS结果与波长色散x射线荧光分析的元素组成测定和x射线光电子能谱和飞行时间二次离子质谱（TOF-SIMS）的元素分布测定进行了比较。建立了相对灵敏度因子，用于PP-TOFMS和TOF-SIMS结果的比较。在无需校准的情况下，PP-TOFMS能够测定薄膜中In和Al的相对组成，精度为10 rel. %。从PP-TOFMS技术获得的深度剖面在几分钟内获得，并且显示出与TOF-SIMS测量非常相似的In， Al和Ga分布，因此PP-TOFMS已被证明是对TOF-SIMS分析的有价值的补充，用于快速工艺开发。
This work shows the capabilities of the plasma profiling time of flight mass spectrometry (PP-TOFMS) for the determination of elemental composition and distribution in InAlGaN thin films used for high electron mobility transistors. The PP-TOFMS results have been compared with wavelength dispersive x-ray fluorescence analyses for the elemental composition determination and with x-ray photoelectron spectroscopy and time of flight secondary ion mass spectrometry (TOF-SIMS) for elemental distributions. Relative sensitivity factors have been developed for the comparison of PP-TOFMS with TOF-SIMS results. The PP-TOFMS was able to determine the relative composition of In and Al in the thin films with an accuracy of 10 rel. % without calibration. Depth profiles acquired from the PP-TOFMS technique were obtained within a few minutes and exhibited very similar In, Al, and Ga distributions to TOF-SIMS measurements, and thus PP-TOFMS has been shown to be a valuable addition to TOF-SIMS analysis for a fast process dev...