Surface recombination velocity and bulk lifetime in GaAs and InP
Surface recombination velocity and bulk lifetime in GaAs and InP
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GaAs 和 InP 的表面复合速度和体寿命
DOI：
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发表时间：
1986
期刊：
影响因子：
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通讯作者：
J. Wager
中科院分区：
文献类型：
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作者：
B. Rastegar;J. Wager
导出了一个解析表达式，该表达式允许从单次非接触光电导衰减（PCD）测量中提取体少数载流子复合寿命tau和表面复合速度S。这个解析表达式相当复杂，但可以简化为一阶近似。对较复杂的表达式和一阶近似的计算机模拟比较表明，一阶表达式和一阶近似表明，一阶近似模型是准确的，并且对n型和p型材料同样有效。
An analytical expression is derived which allows the bulk minority carrier recombination lifetime tau and the surface recombination velocity S to be extracted from a single non-contact photoconductivity decay (PCD) measurement. This analytical expression is rather complex, but can be reduced to a first-order approximation. A comparison of the computer simulation of the more complex expression and the first-order approximation reveals that the first-order expression and the first-order approximation reveals that the first-order approximation model is accurate and is equally valid for both n-type and p-type materials.