Computational materials design of filled tetrahedral compound magnetic semiconductors
Computational materials design of filled tetrahedral compound magnetic semiconductors
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DOI：
10.1016/j.physb.2011.09.036
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发表时间：
2012-08
影响因子：
2.8
通讯作者：
Kazunori Sato;S. Fujimoto;H. Fujii;T. Fukushima;H. Katayama‐Yoshida
中科院分区：
文献类型：
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作者：
Kazunori Sato;S. Fujimoto;H. Fujii;T. Fukushima;H. Katayama‐Yoshida
