Evaluation of band edge parameters, Li ion dynamics and excellent electrochemical properties of Li4Ti5O12 anode thin films

Evaluation of band edge parameters, Li ion dynamics and excellent electrochemical properties of Li4Ti5O12 anode thin films
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DOI:
10.1016/j.electacta.2020.136741
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发表时间:
2020-09
影响因子:
6.6
通讯作者:
S. Subash;S. Yasui;S. Yasuhara;L. N. Patro;K. Bharathi
S. Subash;S. Yasui;S. Yasuhara;L. N. Patro;K. Bharathi
中科院分区:
材料科学2区
文献类型:
--
作者:
S. Subash;S. Yasui;S. Yasuhara;L. N. Patro;K. Bharathi

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本文报道了用射频溅射技术制备的li4ti5o12薄膜的电化学数据、功函数、Li离子动力学和优异的电化学性能计算出的带边参数。室温下的拉曼光谱记录证实了尖晶石结构li4ti5o12薄膜的形成。利用扫描电子显微镜(FESEM)和原子力显微镜(AFM)图像分析表面形貌和粗糙度值。室温下的平均功函数值为5.2 eV。循环伏安法研究证实氧化峰和还原峰分别出现在1.58 V和1.55 V。根据电化学数据计算了带边参数,建立了li4ti5o12薄膜的能带图。利用等效电路模型分析的电化学阻抗谱数据对锂离子动力学进行了评价。氧化还原前后li4ti5o12薄膜的电导率分别为1.25 × 10−6和1.36 × 10−6S/cm。建立了li4ti5o12薄膜的表面性能、能带边参数与电化学过程的关系,并给出了薄膜的能带图。
We report on band edge parameters calculated from the electrochemical data, work function, Li ion dynamics and excellent electrochemical properties of Li4Ti5O12thin films prepared by RF sputtering technique. Raman spectra recorded at room temperature confirms the formation of Li4Ti5O12thin films in spinel structure. Surface morphology and roughness values are analyzed using scanning electron microscope (FESEM) and atomic force microscope (AFM) images. The average work function value at room temperature is seen to be 5.2 eV. Cyclic voltammetry studies confirm the oxidation and reduction peaks appear at 1.58 V and 1.55 V respectively. Band edge parameters are calculated from the electrochemical data and band diagram for the Li4Ti5O12thin film is established. Li ion dynamics is evaluated using electrochemical impedance spectroscopy data analyzed with equivalent circuit model. Conductivity values of Li4Ti5O12thin films before and after the redox process is seen to be 1.25 × 10−6and 1.36 × 10−6S/cm respectively. Correlation between the surface properties, band edge parameters and the electrochemical process is established and the band diagram of Li4Ti5O12thin film is proposed.