Compact 1D-silicon photonic crystal electro-optic modulator operating with ultra-low switching voltage and energy.
Compact 1D-silicon photonic crystal electro-optic modulator operating with ultra-low switching voltage and energy.
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DOI：
10.1364/oe.22.028623
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发表时间：
2014-11
期刊：
影响因子：
3.8
通讯作者：
A. Shakoor;K. Nozaki;E. Kuramochi;K. Nishiguchi;A. Shinya;M. Notomi
中科院分区：
文献类型：
--
作者：
A. Shakoor;K. Nozaki;E. Kuramochi;K. Nishiguchi;A. Shinya;M. Notomi
我们展示了一个小尺寸（600纳米宽）的一维硅光子晶体电光调制器，在GHz速度下仅以50 mV的摆幅电压和0.1 fJ/bit的开关能量工作，这是迄今为止报道的硅电光调制器的最低值。在超低的50 mV摆幅电压下，器件的消光比为3 dB，总能耗为42.8 fJ/bit，主要由状态保持能量决定。在300 mV摆幅电压下，总能量消耗降至14.65 fJ/bit，同时仍保持开关能量低于2 fJ/bit。在最佳电压条件下，该器件的最大工作速度为3gbps，消光比为8db，在1gbps调制速度下，消光比上升到11db。
We demonstrate a small foot print (600 nm wide) 1D silicon photonic crystal electro-optic modulator operating with only a 50 mV swing voltage and 0.1 fJ/bit switching energy at GHz speeds, which are the lowest values ever reported for a silicon electro-optic modulator. A 3 dB extinction ratio is demonstrated with an ultra-low 50 mV swing voltage with a total device energy consumption of 42.8 fJ/bit, which is dominated by the state holding energy. The total energy consumption is reduced to 14.65 fJ/bit for a 300 mV swing voltage while still keeping the switching energy at less than 2 fJ/bit. Under optimum voltage conditions, the device operates with a maximum speed of 3 Gbps with 8 dB extinction ratio, which rises to 11 dB for a 1 Gbps modulation speed.