Highly Uniform 1.5 µm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers
Highly Uniform 1.5 µm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers
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高度均匀的 1.5 µm 波长深度蚀刻半导体/苯并环丁烯分布式布拉格反射激光器
DOI：
10.1143/jjap.39.l1297
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
S. Arai
中科院分区：
文献类型：
--
作者：
M. M. Raj;J. Wiedmann;Y. Saka;K. Ebihara;S. Arai
深蚀刻分布式布拉格反射器 (DBR) 激光器的激光性能得到改善，阈值电流低至 7.2 mA，微分量子效率高达 50%，且均匀性高。根据阈值电流对有源区长度的依赖性，15-DBR 反射器的反射率估计高达 95%。室温连续波运行的初步测试表明，稳定运行时间超过 4000 小时。
The lasing performance of deeply etched distributed Bragg reflector (DBR) lasers was improved to a threshold current as low as 7.2 mA and a differential quantum efficiency as high as 50% with high uniformity. The reflectivity of the 15-DBR reflector was estimated to be as high as 95% from the threshold current dependence on the active region length. A preliminary test under room-temperature CW operation showed stable operation for a duration in excess of 4000 hours.