Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices
Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices
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DOI：
10.1143/jjap.47.6266
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发表时间：
2008-08-01
影响因子：
1.5
通讯作者：
Takagi, Hidenori
中科院分区：
文献类型：
--
作者：
Fujiwara, Kohei;Nemoto, Takumi;Takagi, Hidenori
研究了金属/CuO/金属三明治结构平面器件的电阻开关机理。我们报告的直接观察的CuO通道内的设备，这是形成后的初始电压应用（形成过程）的导电桥。研究发现，软介质击穿过程中仅形成单桥时才会出现电阻切换现象。我们认为，这种导电桥的减少和氧化的作用所施加的字段和/或电流引起一种新的非易失性存储器的效果。
The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed upon the initial voltage application (forming process). It is found that the resistance switching phenomenon only occurs when just a single bridge is formed during a soft dielectric breakdown. We argue that the reduction and oxidation of this conducting bridge by the action of an applied field and/or current gives rise to a novel nonvolatile memory effect.