Arrayed silicon avalanche cathodes
Arrayed silicon avalanche cathodes
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DOI：
10.1109/55.62970
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发表时间：
1990
影响因子：
4.9
通讯作者：
J. Ea;B. Lalevic;D. Zhu;Y. Lu;R. Zeto
中科院分区：
文献类型：
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作者：
J. Ea;B. Lalevic;D. Zhu;Y. Lu;R. Zeto
制备了由重掺杂浅（小于300 A）p-n结组成的硅雪崩阴极（SAC），并对其进行了表征，用作硅基微真空二极管的电子源。研究了发射电流随二极管反向偏置电压和外场的变化关系。场由放置在阴极上方约1 mm处的阳极提供，以模拟将用内置芯片阳极获得的场。测试了18种不同形状和尺寸的SAC。单裸Si p-n结冷阴极的发射电流为0.24 μ A，发射效率（发射电流/二极管总电流）为2.1 × 10 ~（-5）/。
Silicon avalanche cathodes (SACs) consisting of a heavily doped shallow (less than 300 A) p-n junctions were fabricated, characterized, and used as electron sources in Si-based microvacuum diodes. The emission current was investigated as a function of diode reverse-biased voltage and external field. The field was provided by an anode placed approximately 1 mm above the cathode to simulate the field which would be obtained with a built-on-chip anode. Eighteen different shapes and sizes of SACs were tested. An emission current of 0.24 mu A and an emission efficiency (emission current/total diode current) of 2.1*10/sup -5/ were observed from the single bare Si p-n junction cold cathode.>