dc-electric-field-induced second-harmonic generation in Si(111)-SiO2-Cr metal-oxide-semiconductor structures
dc-electric-field-induced second-harmonic generation in Si(111)-SiO2-Cr metal-oxide-semiconductor structures
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DOI：
10.1103/physrevb.54.1825
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发表时间：
1996-07-15
影响因子：
3.7
通讯作者：
Rasing, T
中科院分区：
文献类型：
--
作者：
Aktsipetrov, OA;Fedyanin, AA;Rasing, T
研究了在Si(111)-SiO2界面下通过平面Si-SiO2- cr MOS结构传输直流电场诱导二次谐波的机理。确定了在空间电荷区产生的场致二次极化的二次谐波贡献。论证了电场在硅空间电荷区空间分布的作用，以及氧化层厚度的影响。我们建立了一个EISH的现象学模型，考虑了场依赖和场独立对非线性极化的影响（非线性干涉）以及EISH波的延迟。我们表明，由于这些干扰效应，EISH曲线的最小值与平带电压不一致。
The mechanism of dc-electric-field-induced second-harmonic generation (EISH) was studied at the buried Si(111)-SiO2 interface in transmission through a planar Si-SiO2-Cr MOS structure. The second-harmonic contribution of the field-induced quadratic polarization generated in the space-charge region is determined. The role of the spatial distribution of the de electric field inside the silicon space-charge region is demonstrated, as well as the influence of the oxide thickness. We have developed a phenomenological model of the EISH taking into account the interference between field-dependent and field-independent contributions to the nonlinear polarization (nonlinear interference) as well as the retardation of the EISH wave. We show that, due to these interference effects, the minima of the EISH curves do not coincide with the flatband voltage.