Vacancy defect formation in PA-MBE grown C-doped InN
Vacancy defect formation in PA-MBE grown C-doped InN
复制标题
PA-MBE 生长的掺碳 InN 中空位缺陷的形成
DOI：
10.1002/pssc.201300507
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Knübel
中科院分区：
文献类型：
--
作者：
Prozheeva;Tuomisto;Koblmüller;Knübel
利用正电子湮没光谱研究了PA - MBE生长的掺杂碳氮化铟中形成的空位缺陷。掺杂样品的碳浓度变化范围为1.5 × 1017cm - 3 ~ 2.5 × 1018cm-3。实验数据表明，含有N和In空位的空位配合物的存在，从正电子湮灭的角度来看，vin分量占主导地位。空位含量随着碳含量的增加而增加，从未掺杂样品的小于1 × 1016cm - 3到掺杂样品的至少4 × 1016cm - 3。（©2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
Positron annihilation spectroscopy has been used to study vacancy defects formed in PA‐MBE grown carbondoped indium nitride. The carbon concentration of doped samples varied in the range from 1.5 × 1017cm–3to 2.5 × 1018cm–3. The experimental data indicates the existence of vacancy complexes containing both In and N vacancies, with the VIncomponent dominant from the positron annihilation point of view. The vacancy content increases along with increasing carbon content from less than 1 × 1016cm–3in the undoped sample up to at least 4 × 1016cm–3in the doped samples. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)