Interface studies of tungsten gate metal–oxide–silicon capacitors
Interface studies of tungsten gate metal–oxide–silicon capacitors
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钨栅金属氧化物硅电容器的界面研究
DOI：
10.1063/1.1372340
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发表时间：
2001
影响因子：
4
通讯作者：
Wen
中科院分区：
文献类型：
--
作者：
H. Shang;M. White;K. Guarini;P. Solomon;E. Cartier;F. Mcfeely;J. Yurkas;Wen
在100 nm厚的化学气相沉积（CVD）钨栅金属氧化物半导体（MOS）结构中的Si/SiO2界面在不同温度和时间的常规形成气体退火之后表现出高界面态密度（Dit 0>5×1011/cm 2 eV）。 在这封信中，我们表明，这是一个结果的低扩散率和溶解度的分子氢在钨和高温CVD工艺。我们已经发现，原子氢是更有效的钝化钨栅MOS接口，因为它在钨的高扩散率。原子氢可以通过（1）当铝在钨的顶部蒸发时铝与水蒸气的反应、（2）通过氢注入和（3）通过氢等离子体产生。这些技术可以有效地钝化100 nm厚CVD钨栅MOS结构（Dit 0 <5×1010/cm ~ 2 eV）中的Si/SiO_2界面。
The Si/SiO2 interface in 100-nm-thick chemical vapor deposition (CVD) tungsten gate metal–oxide–semiconductor (MOS) structures exhibits high interface state densities (Dit0>5×1011/cm2 eV) after conventional forming gas anneals over varying temperatures and times. In this letter, we show this is a consequence of the low diffusivity and solubility of molecular hydrogen in tungsten and the high temperature CVD process. We have discovered that atomic hydrogen is more effective in passivating tungsten gate MOS interfaces because of its higher diffusivity in tungsten. Atomic hydrogen can be produced (1) by the reaction of aluminum with water vapor when aluminum is evaporated on the top of tungsten, (2) by hydrogen implantation, and (3) by hydrogen plasma. These techniques can passivate the Si/SiO2 interface effectively in MOS structures (Dit0<5×1010/cm2 eV) with 100-nm thick CVD tungsten gates.