Oxygen precipitation in heavily phosphorus-doped Czochralski silicon: effect of nitrogen codoping
Oxygen precipitation in heavily phosphorus-doped Czochralski silicon: effect of nitrogen codoping
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DOI：
10.1088/0268-1242/24/10/105030
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发表时间：
2009-03
影响因子：
1.9
通讯作者：
Yuheng Zeng;Xiangyang Ma;Jiahe Chen;D. Tian;Longfei Gong;Deren Yang
中科院分区：
文献类型：
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作者：
Yuheng Zeng;Xiangyang Ma;Jiahe Chen;D. Tian;Longfei Gong;Deren Yang
对常规直拉硅片和氮共掺重掺磷直拉硅片在不同低温（650-850 °C）和高温（1050 °C）两步退火条件下的氧沉淀进行了比较研究。结果表明，650 °C成核退火导致了明显的OP，两种硅片的体微缺陷密度几乎相同。而在750或850 °C下的成核退火的情况下，常规重P掺杂的CZ-Si具有轻微的OP，与产生相当强的OP的氮共掺杂的对应物形成对比。重P掺杂被认为在650 °C下对氧沉淀物成核施加显著的增强效应，但在750和850 °C下没有，而氮共掺杂在750或850 °C下为氧沉淀成核提供了异质中心。有理由相信，氮共掺杂也是增强重掺P直拉硅中氧沉淀的有效途径。
Oxygen precipitation (OP) in the conventional and nitrogen-codoped heavily phosphorous (P)-doped Czochralski silicon (CZ-Si) wafers subjected to various low- (650–850 °C) and high-temperature (1050 °C) two-step annealing conditions have been comparatively investigated. It was found that the nucleation annealing at 650 °C led to remarkable OP and the resulting bulk micro defect densities were nearly the same in both kinds of silicon wafers. While in the case with the nucleation annealing at 750 or 850 °C, the conventional heavily P-doped CZ-Si featured slight OP, in contrast to the nitrogen-codoped counterpart that put up considerably intense OP. The heavily P doping is believed to exert a significant enhancement effect on oxygen precipitate nucleation at 650 °C but not at 750 and 850 °C, while the nitrogen codoping offers heterogeneous centers for oxygen precipitate nucleation at 750 or 850 °C. It is reasonably believed that nitrogen codoping is also an effective pathway to enhance oxygen precipitation in heavily P-doped CZ-Si.