Interband tunnel junctions for AlGaN Ultra-Violet light emitting diodes (Conference Presentation)
Interband tunnel junctions for AlGaN Ultra-Violet light emitting diodes (Conference Presentation)
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AlGaN 紫外发光二极管的带间隧道结（会议演示）
DOI：
10.1117/12.2658149
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发表时间：
2023
期刊：
影响因子：
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通讯作者：
Rajan, Siddharth
中科院分区：
文献类型：
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作者：
Dominic Merwin Xavier, Agnes Maneesha;Ghosh, Arnob;Rahman, Sheikh Ifatur;Arafin, Shamsul;Rajan, Siddharth
海藻基紫外发光二极管（UV LEDs）在水净化、空气消毒和医疗传感等一系列应用中前景广阔。然而，UV led的广泛采用受到器件效率差的限制。这归因于传统UV LED结构的强内部光吸收和差的电注入效率，传统UV LED结构通常使用吸收p-GaN层进行p型接触。最近超宽隙AlGaN隧道结的发展使得一种新的UV LED设计没有吸收p-GaN接触层。在本次演讲中，我们将讨论AlGaN隧道结的最新进展和基于隧道结的UV led的发展，并讨论实现高功率，高效率UV led的挑战和未来前景。
AlGaN-based ultra-violet light emitting diodes (UV LEDs) are promising for a range of applications, including water purification, air disinfection and medical sensing. However, widespread adoption of UV LEDs is limited by the poor device efficiency. This has been attributed to the strong internal light absorption and poor electrical injection efficiency for the conventional UV LED structures, which typically use an absorbing p-GaN layer for p-type contact. Recent development of ultra-wide banggap AlGaN tunnel junctions enabled a novel UV LED design with the absence of the absorbing p-GaN contact layer. In this presentation, we will discuss recent progress of the AlGaN tunnel junctions and the development of tunnel junction-based UV LEDs, and discuss the challenges and future perspectives for the realization of high power, high efficiency UV LEDs.