Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching
Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching
复制标题
使用弹道反应离子蚀刻以可控角度进行纳米级高深宽比沟槽蚀刻
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
R. Dynes
中科院分区：
文献类型：
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作者：
S. Cybart;P. Roediger;E. Ulin;Stephen M. Wu;T. Wong;R. Dynes
作者展示了一种低压反应离子刻蚀工艺，能够在光刻胶中图案化纳米尺度的倾斜侧壁和三维结构。在低压下，等离子体具有大的暗空间区域，其中蚀刻剂离子具有非常大的高度定向的平均自由路径。将样品完全安装在该暗空间内允许相对于阴极以最小的底切以一定角度蚀刻，从而产生高纵横比纳米级成角度特征。通过反转初始角度并进行第二次蚀刻，作者创建了三维掩模轮廓。
The authors demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure, the plasma has a large dark space region where the etchant ions have very large highly directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch, the authors create three-dimensional mask profiles.