Plasmon-loss imaging of chains of crystalline-silicon nanospheres and silicon nanowires
Plasmon-loss imaging of chains of crystalline-silicon nanospheres and silicon nanowires
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DOI：
10.1093/oxfordjournals.jmicro.a023807
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发表时间：
2000-01-01
期刊：
影响因子：
--
通讯作者：
Tanaka, K
中科院分区：
文献类型：
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作者：
Kohno, H;Takeda, S;Tanaka, K
利用能量过滤透射电子显微镜（TEM）研究了晶体硅纳米球和硅纳米线链中的纳米结构。对链中硅纳米球形状的观察提供了直接证据，表明链是通过表面氧化过程形成的，这可能优先在颈部起作用。揭示了硅纳米线的多样性纳米结构，我们发现了具有周期性调制的硅芯的光滑形状的线。线链过渡区的纳米结构也首次进行了研究。线链过渡不是硅纳米线和硅纳米球链的简单结，而是在过渡位置附近的线区域中具有周期性调制的硅芯。
Nanostructures in chains of crystalline-silicon nanospheres and silicon nanowires were investigated using energy-filtered transmission electron microscopy (TEM). Observation of the shape of the silicon nanospheres in the chains provided the direct evidence that the chains were formed via the surface oxidation process, which may preferentially work at the necks. The diverse nanostructures in silicon nanowires were revealed, and we found smooth-shaped wires which have periodically modulated silicon cores. Nanostructures in wire-chain transition regions were also investigated for the first time. The wire-chain transition is not a simple junction of a silicon nanowire and a chain of silicon nanospheres, but has a periodically modulated silicon core in the wire region near the transition position.