First results on the charge collection properties of segmented detectors made with p-type bulk silicon
First results on the charge collection properties of segmented detectors made with p-type bulk silicon
复制标题
用 p 型体硅制成的分段探测器的电荷收集特性的初步结果
DOI：
10.1016/s0168-9002(02)00263-2
复制
发表时间：
2002
影响因子：
1.4
通讯作者：
J. Jackson
中科院分区：
文献类型：
--
作者：
G. Casse;P. Allport;T. Bowcock;A. Greenall;M. Hanlon;J. Jackson
n型体探测器的辐射损伤会引入稳定的缺陷，作为有效的p型掺杂，并导致硅衬底的导电类型在几倍于1013 protonscm −2的注量后发生变化（类型反转）。反转后的二极管结从原来的一侧迁移到探测器的背面。结的迁移可以使用具有p型衬底的硅探测器来防止。此外，n侧读出的使用对于在全耗尽电压以下操作的分段器件给出了更高的电荷收集效率。在p型衬底上（n-in-p二极管结构）制作了大面积（16.4 × 6.4cm ~ 2）多晶硅偏置电阻电容耦合80μm间距探测器。这些探测器已经用24 GeV/c质子辐照，积分通量为3× 1014 cm − 2，并在25°C下保持7天，以达到退火曲线的宽最小值。结果上的比较，它们的电荷收集性能与探测器使用p-带读出后，相应的剂量和退火。
Radiation damage of n-type bulk detectors introduces stable defects acting as effective p-type doping and leads to the change of the conductivity type of the silicon substrate (type inversion) after a fluence of a few times 1013protonscm−2. The diode junction after inversion migrates from the original side to the back plane of the detector. The migration of the junction can be prevented using silicon detectors with p-type substrates. Furthermore, the use of n-side readout gives higher charge collection efficiency for segmented devices operated below the full depletion voltage. Large area (≈ 6.4×6.4cm2) capacitively coupled 80μm pitch detectors using polysilicon bias resistors have been fabricated on p-type substrates (n-in-p diode structure). These detectors have been irradiated with 24GeV/c protons to an integrated fluence of 3×1014cm−2and kept for 7 days at 25°C to reach the broad minimum of the annealing curve. Results are presented on the comparison of their charge collection properties with detectors using p-strip read-out after corresponding dose and annealing.