Low threshold voltage blue light emitting diodes based on thulium doped gallium oxides
Low threshold voltage blue light emitting diodes based on thulium doped gallium oxides
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DOI：
10.35848/1882-0786/ac10a7
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发表时间：
2021
影响因子：
2.3
通讯作者：
Zewei Chen;Katsuhiko Saito;Tooru Tanaka;Q. Guo
中科院分区：
文献类型：
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作者：
Zewei Chen;Katsuhiko Saito;Tooru Tanaka;Q. Guo
采用脉冲激光沉积法在Si衬底上制备了掺铥氧化镓（Tm-Ga 2 O 3）薄膜。Tm-Ga_2 O_3/Si发光二极管（LED）的蓝光发射（476 nm和460 nm）可以通过肉眼观察到。Tm-Ga_2 O_3/Si发光二极管的阈值电压为6.3V，低于Tm-GaN/Si器件的阈值电压。通过结合我们以前报道的Er-Ga_2 O_3的绿色发射和Eu-Ga_2 O_3的红色发射，Tm-Ga_2 O_3的强蓝色发射可以实现具有单一Ga_2 O_3基质的全色LED。这些结果为将Ga 2 O3基全色LED与主流Si技术集成开辟了一条途径。
Thulium doped gallium oxides (Tm-Ga2O3) films were deposited on Si substrates by the pulsed laser deposition method. Blue emissions (476 nm and 460 nm) can be observed by the naked eye from Tm-Ga2O3/Si light emitting diodes (LEDs). The threshold voltage of Tm-Ga2O3/Si LEDs is 6.3 V, which is lower than that of Tm-GaN/Si devices. By combining our previously reported green emission from Er-Ga2O3 and red emission from Eu-Ga2O3, strong blue emission from Tm-Ga2O3 can realize the full-color LEDs with the single host of Ga2O3. These results open a pathway for integrating Ga2O3 based full-color LEDs with mainstream Si technology.