Investigation of magnetic tunneling junctions with wedge-shaped barrier

Investigation of magnetic tunneling junctions with wedge-shaped barrier
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DOI：
10.1063/1.1447881
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发表时间：
2002-05
期刊：
Journal of Applied Physics
影响因子：
3.2
通讯作者：
J. Du;X. Xiang;G. Landry;B. You;A. Hu;Huaizhou Zhao;J. Xiao
J. Du;X. Xiang;G. Landry;B. You;A. Hu;Huaizhou Zhao;J. Xiao
中科院分区：
物理与天体物理3区
文献类型：
--
作者：
J. Du;X. Xiang;G. Landry;B. You;A. Hu;Huaizhou Zhao;J. Xiao

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By oxidizing wedge-shaped Al films we were able to simultaneously fabricate Ni80Fe20/AlOx/Ni80Fe20 tunnel junctions with over, completely, and underoxidized barriers. We have systematically investigated TMR ratio, resistance, barrier height and thickness, and bias dependence along the wedge. The bias dependence of MR ratio is asymmetric in overoxidized regions and symmetric in underoxidized regions. The interesting bias dependences of resistance at parallel and antiparallel configurations will also be presented.