A broad-band MQW semiconductor optical amplifier with high saturation output power and low noise figure
A broad-band MQW semiconductor optical amplifier with high saturation output power and low noise figure
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DOI：
10.1109/lpt.2005.845733
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发表时间：
2005-05-01
影响因子：
2.6
通讯作者：
Kuramata, A
中科院分区：
文献类型：
--
作者：
Morito, K;Tanaka, S;Kuramata, A
通过使用低内部损耗的薄多量子阱，开发了一种宽带半导体光放大器（SOA），可实现高芯片饱和输出功率和低芯片噪声系数（NF）。 SOA 在 120 nm (1450-1570 nm) 的 3 dB 增益带宽上表现出 > +19.6 dBm 的高芯片饱和输出功率和 < 4.5 dB 的低芯片 NF。对于以 40 Gb/s 非归零格式调制的光信号的放大，已确认平均芯片输出功率高达 + 18.1 dBm 的无损失放大。
A broad-band semiconductor optical amplifier (SOA) that achieves both a high chip saturation output power and a low chip noise figure (NF) was developed by using a thin multiquantum well with low internal loss. The SOA exhibited a high chip saturation output power of > +19.6 dBm and a low chip NF of < 4.5 dB over a 3-dB gain bandwidth of 120 nm (1450-1570 nm). For the amplification of optical signals modulated at 40-Gb/s non-return-to-zero format, a penalty-free amplification was confirmed up to an average chip output power of + 18.1 dBm.