Flash memory cells - An overview
Flash memory cells - An overview
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DOI：
10.1109/5.622505
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发表时间：
1997-08-01
影响因子：
20.6
通讯作者：
Zanoni, E
中科院分区：
文献类型：
--
作者：
Pavan, P;Bez, R;Zanoni, E
本文的目的是全面概述闪存单元。回顾了实际闪存单元中最常用的基本操作和电荷注入机制，以提供对底层物理和原理的理解，以便理解文献中提出的大量器件结构、处理技术和电路设计。人们对新的单元结构和架构解决方案进行了调查，以突出闪存技术的发展，旨在缩小单元尺寸并升级产品功能。这个主题非常有趣：涉及新材料、结构、原理或应用的新概念不断被引入。全球半导体存储器市场似乎已准备好接受非传统非易失性存储器特定领域的许多新应用。
The aim of this paper is to give a thorough overview of Flash memory cells. Basic operations and charge-injection mechanisms that are most commonly used in actual Flash memory cells are reviewed to provide an understanding of the underlying physics and principles in order to appreciate the large number of device structures, processing technologies, and circuit designs presented in the literature. New cell structures and architectural solutions have been surveyed to highlight the evolution of the Flash memory technology, oriented to both reducing cell size and upgrading product functions. The subject is of extreme interest: new concepts involving new materials, structures, principles, or applications are being continuously introduced. The worldwide semiconductor memory market seems ready to accept many new applications in fields that are not specific to traditional nonvolatile memories.