Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled Si nanostructures
Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled Si nanostructures
复制标题
DOI：
10.1016/j.mtener.2019.04.014
复制
发表时间：
2019-09-01
影响因子：
9.3
通讯作者：
Nakamura, Yoshiaki
中科院分区：
文献类型：
--
作者：
Sakane, Shunya;Ishibe, Takafumi;Nakamura, Yoshiaki
我们彻底研究了载流子和声子输运相关的热电性能，使用绝对控制的硅纳米结构，即硅薄膜含有外延纳米点（ND）。在Si纳米结构中，选择性地引入各种ND材料，例如Ge和β-FeSi 2。这导致了ND/Si异质界面控制、界面能带偏移和Si薄膜晶格失配应变。超高密度堆垛层错也可以有意引入使用SiO2薄膜。我们降低了导热系数（
We thoroughly investigated carrier and phonon transports related to thermoelectric properties using absolutely-controlled Si nanostructures, namely Si films containing epitaxial nanodots (NDs). In the Si nanostructure, various ND materials were introduced selectively such as Ge and beta-FeSi2. This brings the ND/Si hetero-interface control; interface energy band offset and lattice mismatch strain in Si films. Ultrahigh density stacking faults can also be intentionally introduced using ultrathin SiO2 films. We reduced thermal conductivity (