Self-heating and Temperature Measurement in Sub-μm-MOSFETs
Self-heating and Temperature Measurement in Sub-μm-MOSFETs
复制标题
亚微米 MOSFET 的自热和温度测量
DOI：
10.1007/978-3-642-52314-4_141
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
J. Trager
中科院分区：
文献类型：
--
作者：
P.G. Mautry;J. Trager
我们首次通过亚微米金属 - 氧化物 - 半导体场效应晶体管（MOSFET）内部的温度测量以及时间分辨率为3纳秒的动态漏极电流测量，报道了晶格自热效应的观测结果。多晶硅栅极的与温度相关的电阻已被用作温度传感器。随着沟道长度L的减小，温度升高的速度比1/L更快。对于设计尺寸为宽/长 = 10/0.6微米的n沟道MOSFET，在5.0伏的电源电压下，温度升高接近60开尔文。
For the first time we report the observation of lattice self-heating effects by temperature measurements inside sub-μm MOSFETs and by dynamic drain current measurements with a time resolution of 3 ns. The temperature dependent electrical resistance of a polysilicon gate has been used as the temperature sensor. With decreasing channel length L the temperature increase rises faster than 1/L. For a n-channel MOSFET with design dimensions W/L = 10/0.6 μm the temperature rise approach 60 K at supply voltage of 5.0 V.