Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors
Novel and Enhanced Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure Transistors
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DOI：
10.1002/adfm.201401504
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发表时间：
2014-11-26
影响因子：
19
通讯作者：
Wei, Su-Huai
中科院分区：
文献类型：
--
作者：
Huo, Nengjie;Kang, Jun;Wei, Su-Huai
货车瓦异质结构是通过组装孤立的二维（2D）晶体而设计的，已经成为一类具有有趣和不寻常的物理性质的新型人工材料。本文报道了具有不同结构的多层MoS_2-WS_2异质结构，并研究了它们的光电性能。它表明，新的异质结构材料具有新的功能和上级的电气和光电性能，远远超过了一个为他们的成分，二硫化钼或WS 2。该垂直晶体管具有新颖的整流和双极特性，还可以用作光伏电池和自驱动光电探测器，光开关比超过10（3）。与隔离的多层MoS 2或WS 2纳米片晶体管相比，平面器件还表现出高场效应开/关比（>10（5））、65 cm（2）/Vs的高电子迁移率和1.42 A/W的高光响应度。结果表明，MoS 2-WS 2异质结构的形成可以显着提高光电器件的性能，从而为未来的纳米电子，光伏和光电应用开辟了可能性。
Van der Waals heterostructures designed by assembling isolated two-dimensional (2D) crystals have emerged as a new class of artificial materials with interesting and unusual physical properties. Here, the multilayer MoS2-WS2 heterostructures with different configurations are reported and their optoelectronic properties are studied. It is shown that the new heterostructured material possesses new functionalities and superior electrical and optoelectronic properties that far exceed the one for their constituents, MoS2 or WS2. The vertical transistor exhibits a novel rectifying and bipolar behavior, and can also act as photovoltaic cell and self-driven photodetector with photo-switching ratio exceeding 10(3). The planar device also exhibits high field-effect ON/OFF ratio (>10(5)), high electron mobility of 65 cm(2)/Vs, and high photoresponsivity of 1.42 A/W compared to that in isolated multilayer MoS2 or WS2 nanoflake transistors. The results suggest that formation of MoS2-WS2 heterostructures could significantly enhance the performance of optoelectronic devices, thus open up possibilities for future nanoelectronic, photovoltaic, and optoelectronic applications.