Impact of BEOL stress on BiCMOS9MW HBTs

Impact of BEOL stress on BiCMOS9MW HBTs
复制标题

DOI：
10.1109/bctm.2013.6798181
复制
发表时间：
2013-09
期刊：
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
影响因子：
--
通讯作者：
E. Canderle;P. Chevalier;G. Avenier;N. Derrier;D. Céli;C. Gaquière
E. Canderle;P. Chevalier;G. Avenier;N. Derrier;D. Céli;C. Gaquière
中科院分区：
其他
文献类型：
--
作者：
E. Canderle;P. Chevalier;G. Avenier;N. Derrier;D. Céli;C. Gaquière

文献摘要

被引文献

相似文献

对意法半导体BiCMOS9MW技术的SiGe HBTs进行了应力研究。金属连接叠加产生的应变影响了晶体管的基带隙：从密度更大的假体结构的参考中，指出了9.1 meV的带隙能量变化。在直流和高频特性中嵌入假体结构，集电极电流增加25%，传输频率fT和fMAX分别增加21%和12%。
Stress investigations have been carried out on SiGe HBTs from STMicroelectronics BiCMOS9MW technology. The strain created by the stack of metal connections impacts the base bandgap of the transistors: from the reference to the denser dummies structure, a 9.1 meV bandgap energy variation is pointed out. Dummies structures were embedded for both DC and HF characterizations which showed a 25% increase for the collector current, and a 21% and 12% increase for the transit frequencies fT and fMAX respectively.