An analysis and experimental approach to MOS controlled diodes behavior
An analysis and experimental approach to MOS controlled diodes behavior
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DOI：
10.1109/63.867681
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发表时间：
2000-09
影响因子：
6.7
通讯作者：
Zhenxue Xu;Bo Zhang;A. Huang
中科院分区：
文献类型：
--
作者：
Zhenxue Xu;Bo Zhang;A. Huang
金属氧化物半导体（MOS）控制二极管（MCD）是一种新型的功率半导体二极管，可以实现理想的二极管性能。在本文中，实验验证的MCD的关键概念，首次提出了通过使用市售的功率金属氧化物半导体场效应晶体管（MOSFET）作为MCD操作。测量了这些“MCD”的反向恢复电流和反向恢复电荷，并与MOSFET的体二极管进行了比较。这些测量结果表明，MCDs可以降低反向恢复电流，存储电荷，和开关损耗显着。优化MCD性能在1.2 kV，2.4 kV，和4.5 kV的数值模拟的基础上预测。一旦开发出优化的MCD，应获得接近器件模拟预测的MCD的理想性能。
The metal oxide semiconductor (MOS)-controlled diode (MCD) is a new class of power semiconductor diode that can achieve ideal diode performance. In this paper, experimental verification of the MCD key concept is presented for the first time by using commercially available power metal oxide semiconductor field effect transistors (MOSFETs) operating as MCDs. Measurements of the reverse recovery currents and reverse recovery charges of these "MCDs" are obtained and compared with the body diodes of the MOSFETs. These measurements suggest that MCDs can reduce the reverse recovery current, storage charge, and switching loss significantly. Optimized MCD performances at 1.2 kV, 2.4 kV, and 4.5 kV are also predicted based on numerical simulations. Ideal performance of the MCD close to that predicted by the device simulation should be obtained once an optimized MCD is developed.