The Nonlinear Electronic Transport in Multilayer Graphene on Silicon-on-Insulator Substrates
The Nonlinear Electronic Transport in Multilayer Graphene on Silicon-on-Insulator Substrates
复制标题
绝缘体上硅衬底上多层石墨烯的非线性电子传输
DOI：
10.1088/0256-307x/34/6/067201
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发表时间：
2017
影响因子：
3.5
通讯作者：
Dongdong Yin
中科院分区：
文献类型：
--
作者：
Yubing Wang;Weihong Yin;Qin Han;Xiaohong Yang;Han Ye;Shuai Wang;Qianqian Lv;Dongdong Yin
我们对部分或完全位于通过电感耦合等离子体（ICP）预蚀刻的硅上的多层石墨烯通道的超线性传输进行了研究。通过在Si/SiO 2 基板上制造多层石墨烯场效应晶体管，我们发现超线性是由多层石墨烯片与ICP蚀刻硅之间的相互作用产生的。此外，观察到的装置的超线性输运被发现与施温格机制的预测一致。在高偏置状态下，α 值从 1.02 急剧增加到 1.40。计算出电子空穴对开始产生时对应的电场强度为 5×104 V/m。我们的工作提供了多层石墨烯非线性传输的实验观察。
We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by inductively coupled plasma (ICP). By fabricating a multilayer-graphene field-effect transistor on a Si/SiO 2 substrate, we obtain that the superlinearity results from the interaction between the multilayer graphene sheet and the ICP-etched silicon. In addition, the observed superlinear transport of the device is found to be consistent with the prediction of Schwinger’s mechanism. In the high bias regime, the values of α increase dramatically from 1.02 to 1.40. The strength of the electric field corresponding to the on-start of electron–hole pair production is calculated to be 5×104 V/m. Our work provides an experimental observation of the nonlinear transport of the multilayer graphene.