Carrier concentration, mobility, and electron effective mass in chlorine-doped n-type Zn1−xMnxSe epilayers grown by molecular-beam epitaxy
Carrier concentration, mobility, and electron effective mass in chlorine-doped n-type Zn1−xMnxSe epilayers grown by molecular-beam epitaxy
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分子束外延生长的氯掺杂 n 型 Zn1 浓度−xMnxSe 外延层中的载流子、迁移率和电子有效质量
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
M. Hetterich
中科院分区：
文献类型：
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作者：
B. Daniel;K. C. Agarwal;J. Lupaca;C. Klingshirn;M. Hetterich
我们研究了不同锰含量和掺杂浓度的n型氯掺杂ZnMnSe外延层。在锌硒中，最大掺杂率为6×1019 cm−3，当Mn含量为13%时，掺杂率降至1.1×1019 cm−3。在相同的ZnCl2掺杂源温度下，随着样品中Mn含量的增加，掺杂浓度不断降低。从光学测量中我们发现，与ZnSe相比，Zn0.87Mn0.13Se样品中的电子有效质量较低。此外，Mn的加入增加了样品的电阻率，降低了样品中自由电荷载流子的迁移率。
We investigate n-type chlorine-doped ZnMnSe epilayers with various Mn contents and doping concentrations. In ZnSe, the maximum dopability was 6×1019cm−3, which reduces to 1.1×1019cm−3 at 13% Mn content. At a constant ZnCl2 doping source temperature, the doping concentration decreases continuously with increasing Mn content in the sample. From our optical measurements, we found a lower electron effective mass in Zn0.87Mn0.13Se samples compared to ZnSe. Additionally, the incorporation of Mn increases the resistivity and decreases the mobility of the free charge carriers in the samples.