Superconducting nanowire single-photon detector made of ultrathin γ-Nb4N3 film for mid-infrared wavelengths
Superconducting nanowire single-photon detector made of ultrathin γ-Nb4N3 film for mid-infrared wavelengths
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DOI：
10.1088/1361-6668/abf851
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发表时间：
2021-04
影响因子：
3.6
通讯作者：
Yiming Pan;Hui Zhou;Lu Zhang;Hao Li;Yan Tang;Huiqin Yu;Mengting Si;L. You;Zhen Wang
中科院分区：
文献类型：
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作者：
Yiming Pan;Hui Zhou;Lu Zhang;Hao Li;Yan Tang;Huiqin Yu;Mengting Si;L. You;Zhen Wang
由超薄δ-NbN薄膜制成的超导纳米线单光子探测器在可见光和红外波段都有广泛的应用。在中红外(MIR)波段，报道了由临界温度较低的硅化钨薄膜制成的高达9.9μm波长的SNSPD。在这项研究中，我们展示了NBN-SNSPD在MIR应用中的潜力。用γ-Nb4N3薄膜(6.5 nm厚薄膜的临界温度为5.1K)代替δ-NbN薄膜制备了SNSPD。归一化检测效率对偏置电流的依赖关系表明，在波长高达2145 nm时有明显的饱和平台趋势。计算的截止波长表明了将γ-Nb4N3SNSPD用于更长的MIR波长的可能性。
Superconducting nanowire single-photon detectors (SNSPDs) made of ultrathin δ-NbN films have been widely applied in both visible and infrared wavelengths. For mid-infrared (MIR) wavelengths, SNSPDs made of tungsten silicide films with a lower critical temperature were reported up to 9.9 μm wavelength. In this study, we demonstrate the potential of NbN-SNSPDs for use in MIR applications. SNSPDs made of γ-Nb4N3 films (critical temperature of 5.1 K for 6.5 nm thick films) instead of δ-NbN films were fabricated. The dependence of the normalized detection efficiency on the bias current indicated a clear trend toward a saturated plateau for wavelengths up to 2145 nm. The calculated cut-off wavelengths indicated the possibility of using γ-Nb4N3 SNSPDs for longer MIR wavelengths.