Room-Temperature Bonding of Si Wafers to Pt Films on SiO2 or LiNbO3 Substrates Using Ar-Beam Surface Activation
Room-Temperature Bonding of Si Wafers to Pt Films on SiO2 or LiNbO3 Substrates Using Ar-Beam Surface Activation
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使用 Ar 束表面活化将硅片室温键合到 SiO2 或 LiNbO3 基底上的 Pt 薄膜
DOI：
10.1143/jjap.38.l1559
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发表时间：
1999
影响因子：
1.5
通讯作者：
T. Suga
中科院分区：
文献类型：
--
作者：
H. Takagi;R. Maeda;N. Hosoda;T. Suga
我们已经开发出一种方法来键合硅晶片的Pt膜SiO2或LiNbO3基板在室温下。Ar束蚀刻用于从Si晶片和Pt膜的表面去除污染物，并且表面变得活化。在没有任何热处理的情况下实现Si和Pt之间的强键合。Si和Pt之间的低温化学反应被认为在键合过程中发挥作用。这种方法可以整合不同的材料。埋在两个晶片之间的Pt膜的许多应用也被期望。
We have developed a method to bond Si wafers to Pt films on SiO2 or LiNbO3 substrates at room temperature. Ar beam etching is used to remove contaminants from the surfaces of the Si wafers and the Pt films, and the surfaces become activated. Strong bonding between Si and Pt is achieved without any heat treatment. Low-temperature chemical reaction between Si and Pt is assumed to play a role in the bonding process. This method enables the integration of diverse materials. Many applications of Pt film buried between two wafers are also expected.