High-mobility ZnO nanorod field-effect transistors by self-alignment and electrolyte-gating.
High-mobility ZnO nanorod field-effect transistors by self-alignment and electrolyte-gating.
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DOI：
10.1021/am3026739
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发表时间：
2013-02
影响因子：
9.5
通讯作者：
Stefan Thiemann;Mathias F. Gruber;I. Lokteva;Johannes Hirschmann;M. Halik;J. Zaumseil
中科院分区：
文献类型：
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作者：
Stefan Thiemann;Mathias F. Gruber;I. Lokteva;Johannes Hirschmann;M. Halik;J. Zaumseil
高迁移率、溶液处理场效应晶体管是柔性电子产品的重要构建模块。在这里，我们展示了通过简单的溶剂蒸发技术排列半导体胶体 ZnO 纳米棒，并通过离子液体的电解质门控在低工作电压下实现场效应晶体管的高电子迁移率。排列程度随纳米棒长度、浓度和溶剂蒸发速率而变化。我们发现电子迁移率对排列程度有很强的依赖性，但对纳米棒的长度的依赖性较小。最大场效应迁移率高达 9 cm(2) V(-1) s(-1)，以实现最佳对准。由于工艺温度低（150°C），ZnO纳米棒薄膜适合在柔性聚合物基底上应用。
High mobility, solution-processed field-effect transistors are important building blocks for flexible electronics. Here we demonstrate the alignment of semiconducting, colloidal ZnO nanorods by a simple solvent evaporation technique and achieve high electron mobilities in field-effect transistors at low operating voltages by electrolyte-gating with ionic liquids. The degree of alignment varies with nanorod length, concentration and solvent evaporation rate. We find a strong dependence of electron mobility on the degree of alignment but less on the length of the nanorods. Maximum field-effect mobilities reach up to 9 cm(2) V(-1) s(-1) for optimal alignment. Because of the low process temperature (150 °C), ZnO nanorod thin films are suitable for application on flexible polymer substrates.