Electrostatic enhancement factor for the coagulation of silicon nanoparticles in low-temperature plasmas
Electrostatic enhancement factor for the coagulation of silicon nanoparticles in low-temperature plasmas
复制标题
低温等离子体中硅纳米粒子凝聚的静电增强因子
DOI:
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发表时间:
2018
影响因子:
3.8
通讯作者:
F. Vidal
中科院分区:
文献类型:
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作者:
Benjamín Santos;L. Cacot;C. Boucher;F. Vidal
The coagulation enhancement factor due to electrostatic (Coulomb and polarization-induced) interaction between silicon nanoparticles was numerically computed for different nanoparticle sizes and charges in typical low-temperature argon-silane plasma conditions. We used a rigorous formulation, based on a multipole moment coefficients, to describe the complete electrostatic interaction between dielectric particles. The resulting interaction potential is non-singular at the contact point, which allows to adapt the orbital-motion limited theory to calculate the enhancement factor. It is shown that, due to induced polarization, coagulation is enhanced in neutral-charged particles encounters up to several orders of magnitude. Moreover, the short-range force between like-charged nanoparticles can become attractive as a direct consequence of the dielectric nature of the nanoparticles. The multipolar coefficient potential is compared to an approximate analytic form which can be readily used to simplify the calculations. The results presented here provide a better understanding of the electrostatic interaction in coagulation and can be used in dust growth simulations in low-temperature plasmas where coagulation is a significant process.
影响因子:
4.4
作者:
Bichoutskaia, Elena;Boatwright, Adrian L.;Stace, Anthony J.
通讯作者:
Stace, Anthony J.