Topological Phase Transition-Induced Triaxial Vector Magnetoresistance in (Bi1-xInx)(2)Se-3 Nanodevices
Topological Phase Transition-Induced Triaxial Vector Magnetoresistance in (Bi1-xInx)(2)Se-3 Nanodevices
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(Bi1-xInx)(2)Se-3 纳米器件中拓扑相变诱导的三轴矢量磁阻
DOI：
10.1021/acsnano.7b08054
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发表时间：
2018
期刊：
影响因子：
17.1
通讯作者：
Zhang Rong
中科院分区：
文献类型：
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作者：
Zhang Minhao;Wang Huaiqiang;Mu Kejun;Wang Pengdong;Niu Wei;Zhang Shuai;Xiao Guiling;Chen Yequan;Tong Tong;Fu Dongzhi;Wang Xuefeng;Zhang Haijun;Song Fengqi;Miao Feng;Sun Zhe;Xia Zhengcai;Wang Xinran;Xu Yongbing;Wang Baigeng;Xing Dingyu;Zhang Rong
本文报道了在x = 0.08时，在Bi（Bi 1-xInx）2Se 3纳米器件中的三轴矢量磁电阻（MR）的研究.我们显示了一个哑铃形的面内负MR，直到室温，以及一个大的面外正MR。MR在三个方向上是大约在-3%：1%：225%的比例在2 K。通过厚度和成分相关的磁输运测量，我们表明，在平面内的负MR是由于拓扑相变增强的拓扑临界点附近的表面间耦合。我们的设备表明，在室温自旋电子应用的巨大潜力，例如，矢量磁传感器。
We report the study of a triaxial vector magnetoresistance (MR) in nonmagnetic (Bi1–xInx)2Se3nanodevices at the composition ofx= 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a −3%:–1%:225% ratio at 2 K. Through both the thickness and composition-dependent magnetotransport measurements, we show that the in-plane negative MR is due to the topological phase transition enhanced intersurface coupling near the topological critical point. Our devices suggest the great potential for room-temperature spintronic applications in, for example, vector magnetic sensors.