Formation of the metastable phase of HfxZr1-xO2 ferroelectric films deposited by atomic layer deposition method
Formation of the metastable phase of HfxZr1-xO2 ferroelectric films deposited by atomic layer deposition method
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原子层沉积法沉积HfxZr1-xO2铁电薄膜亚稳态相的形成
DOI:
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发表时间:
2020
期刊:
影响因子:
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通讯作者:
and N. Fujimura
中科院分区:
文献类型:
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作者:
K. Takada;S. Takarae;T. Yoshimura;and N. Fujimura