Layer-resolved kinetics of Si oxidation investigated using the reflectance difference oscillation method
Layer-resolved kinetics of Si oxidation investigated using the reflectance difference oscillation method
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DOI：
10.1103/physrevb.67.195338
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发表时间：
2003-05-15
影响因子：
3.7
通讯作者：
Yamabe, K
中科院分区：
文献类型：
--
作者：
Yasuda, T;Kumagai, N;Yamabe, K
采用反射率差振荡法研究了Si（001）表面的干氧化动力学。氧化的活化能已被发现增加的氧化物-Si界面在深度方向上移动，达到体氧化，2.0 eV，在第三层从表面的值。在第二和第三层氧化中也观察到了氧化速率对O-2压力的非线性依赖性，这是体氧化的报道。化学反应和质量传输机制，这种初始氧化制度进行了讨论。
Dry oxidation kinetics of the Si(001) surface has been investigated using reflectance difference oscillation to resolve atomic-scale phenomena. The activation energy for oxidation has been found to increase as the oxide-Si interface moves in the depth direction, reaching the value for bulk oxidation, 2.0 eV, at the third layer from the surface. The nonlinear dependence of the oxidation rate on the O-2 pressure, which was reported for bulk oxidation, has also been observed in the second- and third-layer oxidation. Chemical reaction and mass transport mechanisms for this initial oxidation regime are discussed.