Multilevel Storage in N-Doped Sb2Te3-Based Lateral Phase Change Memory with an Additional Top TiN Layer
Multilevel Storage in N-Doped Sb2Te3-Based Lateral Phase Change Memory with an Additional Top TiN Layer
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DOI：
10.1143/jjap.48.04c063
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发表时间：
2009-04
影响因子：
1.5
通讯作者：
Y. Yin;K. Ota;T. Noguchi;H. Ohno;H. Sone;S. Hosaka
中科院分区：
文献类型：
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作者：
Y. Yin;K. Ota;T. Noguchi;H. Ohno;H. Sone;S. Hosaka
在这项研究中，我们提出了在垂直和横向相变存储器（PCM）设备的多级存储（MLS）的物理图像和调查MLS在横向PCM设备与附加的顶部加热器（LTH-PCM）。两个横向电极上方的有源层由作为顶部加热器的50 nm厚的TiN层和150 nm厚的N掺杂Sb 2 Te 3层组成。通过电流扫描或脉冲应用获得许多不同的中间电平。根据我们的分析，我们的器件中的MLS主要是由于焦耳加热导致的电极之间的逐渐结晶。
In this study, we present the physical images of multilevel storage (MLS) in both vertical and lateral phase change memory (PCM) devices and investigate MLS in a lateral PCM device with an additional top heater (LTH-PCM). The active layers above two lateral electrodes consist of a 50-nm-thick TiN layer as a top heater and a 150-nm-thick N-doped Sb2Te3 layer. A number of distinct intermediate levels are obtained by current sweeping or pulse application. According to our analysis, MLS in our devices results mainly from the gradual crystallization between electrodes by Joule heating.