Time-resolved measurement of film growth during reactive high power pulsed magnetron sputtering (HIPIMS) of titanium nitride
Time-resolved measurement of film growth during reactive high power pulsed magnetron sputtering (HIPIMS) of titanium nitride
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DOI：
10.1088/0022-3727/46/49/495201
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发表时间：
2013-05
期刊：
影响因子：
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通讯作者：
F. Mitschker;M. Prenzel;J. Benedikt;C. Maszl;A. von Keudell
中科院分区：
文献类型：
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作者：
F. Mitschker;M. Prenzel;J. Benedikt;C. Maszl;A. von Keudell
氮化钛的无功高功率脉冲磁控溅射（HIPIMS）生长速率是一个固有的时变过程。通过使用旋转快门设置，可以深入了解其变化，时间分辨率高达25µs。在该装置中，衬底前方有一条200µm狭缝与HIPIMS脉冲同步旋转。这确保了进入的生长通量横向分布在衬底上。通过轮廓术和x射线光电子能谱法测量沉积剖面，推导出每脉冲钛和氮生长通量的时间变化规律。分析表明，薄膜生长主要发生在hiims脉冲期间，其生长速率依次为点火、电流上升、气体稀薄、平台期和余辉期。钛和氮的生长通量略有不同，钛在hiims脉冲开始时占主导地位，氮在脉冲结束时占主导地位。这可以用气体稀薄效应来解释，产生致密的初始金属等离子体和随后被硝化的金属薄膜。
The growth rate during reactive high power pulsed magnetron sputtering (HIPIMS) of titanium nitride is an inherent time-dependent process. By using a rotating shutter setup it is possible to gain an insight into its variation with a temporal resolution of up to 25 µs. In this apparatus a 200 µm slit is rotated in front of the substrate synchronous with the HIPIMS pulses. This ensures that the incoming growth flux is laterally distributed over the substrate. By measuring the resulting deposition profile with profilometry and x-ray photoelectron spectroscopy, the temporal variation of the titanium and nitrogen growth flux per pulse is deduced. The analysis reveals that film growth occurs mainly during an HIPIMS pulse, with the growth rate following the HIPIMS phases ignition, current rise, gas rarefaction, plateau and afterglow. The growth fluxes of titanium and nitrogen follow slightly different behaviours with titanium dominating at the beginning of the HIPIMS pulse and nitrogen at the end of the pulse. This is explained by the gas rarefaction effect resulting in a dense initial metal plasma and metal films which are subsequently nitrified.