Band gap of nanometer thick Si/SiO2 quantum wells: theory versus experiment
Band gap of nanometer thick Si/SiO2 quantum wells: theory versus experiment
复制标题
纳米厚 Si/SiO2 量子阱的带隙：理论与实验
DOI：
10.1117/12.804577
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
D. J. Lockwood
中科院分区：
文献类型：
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作者：
D. J. Lockwood
在光电子学和光子学中，间接带隙的严重缺点限制了元素硅的应用。在硅纳米结构中设计高效发光的多种方法中，已经受到相当大的关注的一种系统是Si/SiO2量子威尔斯。设计这样的结构并不容易，因为为了观察所需的量子限制效应，量子阱厚度必须小于5 nm。然而，这种纳米厚的结构现在已经通过各种技术生产。SiO2层是非晶的，但硅层的范围可以从非晶到纳米晶再到单晶形式。量子威尔斯的基本带隙已被测量主要是通过光学技术和强大的限制效应已被观察到。一些理论的基础上，主要是从头算方法已经开发出不同程度的成功来解释这些结果。本文对Si/SiO2量子威尔斯阱带隙的理论和实验测量进行了详细的比较。
In opto-electronics and photonics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Amongst a number of diverse approaches to engineering efficient light emission in silicon nanostructures, one system that has received considerable attention has been Si/SiO2 quantum wells. Engineering such structures has not been easy, because to observe the desired quantum confinement effects, the quantum well thickness has to be less than 5 nm. Nevertheless, such nanometer thick structures have now been produced by a variety of techniques. The SiO2 layers are amorphous, but the silicon layers can range from amorphous through nanocrystalline to single-crystal form. The fundamental band gap of the quantum wells has been measured primarily by optical techniques and strong confinement effects have been observed. A number of theories based primarily on ab initio approaches have been developed to explain these results with varying degrees of success. In this review, a detailed comparison is made between theoretical and experimental determinations of the band gap in Si/SiO2 quantum wells.